Gate-stored MOS phototransistor image sensor.

Floating-gate Mos Synapse Transistors

Gate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

Gate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

Gate Tunnel Current in an MOS Transistor

A theoretical description of gate tunnel current in an MOS transistor is proposed, and the results of calculations for the case of an n-channel MOSFET with extremely thin gate oxides are given. A comparison of the gate tunnel current with the drain current is made.

Threshold Gate with Hysteresis using Neuron MOS

In this article threshold gates with hysteresis using neuron MOS (νMOS) are presented as basic elements in Null Convention Logic (NCL) circuits. NCL, which proposed by K. M. Fant and S. A. Branst, needs special gates having hysteresis, because NCL uses different ternary logic systems in computation phase and wiping phase of asynchronous behavior, respectively. To impliment the dinamic behavior,...